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| DC COMPONENTS CO., LTD. R BC546 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of audio amplifiers. TO-92 Pinning 1 = Collector 2 = Base 3 = Emitter .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 80 65 6 100 625 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO (1) Min 80 65 6 580 110 2% Typ 700 900 300 - Max 15 250 600 770 700 800 4.5 Unit V V V nA mV mV mV mV mV mV MHz pF Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=10A, IC=0 VCB=30V, IE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, VCE=5V IC=2mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on)1 VBE(on)2 hFE fT Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Cob 380s, Duty Cycle Classification of hFE Rank Range A 110~220 B 200~450 C 420~800 |
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